| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Automotive | Yes |
| PPAP | Unknown |
| Categoría del producto | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | 5 |
| Operating Junction Temperature (°C) | 175 |
| Maximum Continuous Drain Current (A) | 36 |
| Maximum Drain-Source Resistance (mOhm) | 41@10V |
| Typical Gate Charge @ Vgs (nC) | 16@4.5V|35@10V |
| Typical Gate Charge @ 10V (nC) | 35 |
| Typical Input Capacitance @ Vds (pF) | 1850@30V |
| Maximum Power Dissipation (mW) | 62000 |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 18 |
| Typical Turn-Off Delay Time (ns) | 125 |
| Typical Turn-On Delay Time (ns) | 13 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) |
| Package Width | 3.4(Max) |
| Package Length | 3.4(Max) |
| PCB changed | 8 |
| Supplier Package | DFN EP |
| Pin Count | 8 |
