Infineon Technologies AGIQE006NE2LM5ATMA1MOSFETs
Keeping the system in mind, Infineon sets new standards in power MOSFET performance
Source-Down MOSFET Package Innovation: Solving the Power Density Challenge
The innovative Source-Down package flips the silicon die inside allowing for the source to be connected to the thermal pad. This offers significant benefits over today's Drain-Down industry standard by enabling a larger silicon die, reducing RDS(on) and offering superior thermal performance. Infineon's Source-Down package supports the customer’s requirement for high power density and optimized system level efficiency. Additionally, new layout options offer more flexibility for PCB designers to improve thermal and electrical performance at the system level. The product family is currently available in 25V and 40V options with additional voltages being currently worked on.
Applications
- • Drives
- • SMPS
- • Server
- • Telecom
- • OR-ing
Features
- • Major reduction in RDS(on) – up to 25 percent
- • Superior thermal performance in RthJC
- • Optimized layout possibilities
- • Standard Gate footprint
Benefits
- • High current capability
- • More efficient use of PCB area
- • Highest power density and performance
Product Technical Specifications
| Ciss | 4100.0 pF |
| Coss | 1700.0 pF |
| ID (@25°C) max | 298.0 A |
| IDpuls max | 1192.0 A |
| Operating Temperature min max | -55.0 °C 150.0 °C |
| Ptot max | 89.0 W |
| Package | PQFN 3.3x3.3 Source-Down |
| Polarity | N |
| QG (typ @10V) | 61.7 nC |
| QG (typ @4.5V) | 28.5 nC |
| RDS (on) (@4.5V) max | 0.8 mΩ |
| RDS (on) (@10V) max | 0.65 mΩ |
| Rth | 1.4 K/W |
| RthJA max | 60.0 K/W |
| RthJC max | 1.4 K/W |
| VDS max | 25.0 V |
| VGS(th) min max | 1.3 V 2.0 V |
| VGS max | 16.0 V |
| OPN | IQE006NE2LM5ATMA1 |
| Product Status | active and preferred |
| Package Name | PG-TSON-8 |
| Completely lead free | no |
| Halogen free | yes |
| RoHS compliant | yes |
| Packing Size | 5000 |
| Packing Size | TAPE & REEL |
| Moisture Level | 1 |
| Moisture Packing | NON DRY |
Featured Content
Application Note
E-Learning Presentation
Product Brief
Related Products
| OPN | Product Description | Part Class | Static Sensitive | RoHS Compliant | Lead Free |
| IQE013N04LM6ATMA1 | 40V OptiMOS™ MOSFET in Source-Down PQFN 3.3x3.3 Standard Gate | Low-voltage MOSFETs | T | Y | Y |
| IQE013N04LM6CGATMA1 | 40V OptiMOS™ MOSFET in Source-Down PQFN 3.3x3.3 Center Gate | Low-voltage MOSFETs | T | Y | Y |
| IQE006NE2LM5CGATMA1 | 25V OptiMOS™ MOSFET in Source-Down PQFN 3.3x3.3 Center Gate | Low-voltage MOSFETs | T | Y | Y |
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| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 16 | |
| 2 | |
| -55 to 150 | |
| 41 | |
| 100 | |
| 1 | |
| 0.65@10V | |
| 28.5@4.5V|61.7@10V | |
| 61.7 | |
| 5.6 | |
| 9.2 | |
| 25 | |
| 9 | |
| 4100@12V | |
| 130@12V | |
| 1.2 | |
| 1700 | |
| 2100 | |
| 5.3 | |
| 2.6 | |
| 27 | |
| 5.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.5@10V|0.65@4.5V | |
| 2.1 | |
| 1192 | |
| 60 | |
| 0.75 | |
| 2.2 | |
| 1 | |
| 1.6 | |
| 1.2 | |
| 16 | |
| 41 | |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSON EP |
| 8 | |
| Lead Shape | No Lead |
| EDA / CAD Models |
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