Toshiba Diodes, Transistors and Thyristors
3,722 Toshiba Diodes, Transistors and Thyristors
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| Part No. | Price | Stock | Manufacturer | Category | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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CMH01(T2L,TEMQ)
Diode Switching 200V 3A 2-Pin M-FLAT T/R
|
Stock
854
From $0.109 to $0.287
Per Unit
|
Toshiba | Rectifiers | Switching Diode | Single | 200 | 3 | 40 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14G65W,RQ(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
|
Stock
875
From $1.21 to $2.83
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 13.7 | 250@10V | 35@10V | 35 | 130000 | 1300@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5R60APL,L1Q(M
Trans MOSFET N-CH Si 100V 60A 8-Pin SOP Advance
|
Stock
24
From $0.761 to $1.55
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 60 | 5.6@10V | 26@4.5V|52@10V | 132000 | 3300@50V | 8 | SOP Advance | SO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
|
Stock
1,765
From $0.0958 to $0.107
Per Unit
|
Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Hex Collector | 50 | 1 | 100 | 7 | 1.1@20mA@1A | 3 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 3000 | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1114MFV,L3F(T
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R
|
Stock
5,890
From $0.0236 to $0.074
Per Unit
|
Toshiba | Digital BJT - Pre-Biased | NPN | Single | 50 | 1 | 0.1 | 0.1 | 50@10mA@5V | 150 | 0.3@0.25mA@5mA | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1832-GR,LF(T
Trans GP BJT PNP 50V 0.15A 100mW 3-Pin SSM T/R Automotive AEC-Q101
|
Stock
2,760
From $0.0433 to $0.11
Per Unit
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 1 | 50 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 100 | 0.3@10mA@100mA | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5R1E06PL,S1X(S
MOSFETs Silicon N-channel MOS
|
Stock
49
From $0.529 to $0.619
Per Unit
|
Toshiba | MOSFETs | 87000 | 3 | TO-220 | TO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK8R2E06PL,S1X(S
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220
|
Stock
73
From $0.601 to $0.867
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 50 | 8.2@10V | 15@4.5V|28@10V | 81000 | 1990@30V | 3 | TO-220 | TO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1C03FU-B,LF(T
Trans GP BJT NPN 20V 0.3A 200mW 6-Pin US T/R
|
Stock
2,439
From $0.174 to $0.482
Per Unit
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual | 20 | 2 | 50 | 25 | 0.3 | 300 to 500 | 350@4mA@2V | 200 | 0.1@3mA@30mA | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10Q60W,S1VQ
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) IPAK Tube
|
Stock
65
$1.0241
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 9.7 | 430@10V | 20@10V | 20 | 80000 | 700@300V | Tube | 3 | IPAK | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2713-GR,LXGF(T
Silicon NPN Epitaxial Type Automotive AEC-Q101
|
Stock
2,395
From $0.0623 to $0.147
Per Unit
|
Toshiba | GP BJT | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV280,H3F
Varactor Diode Single 15V 3.8pF 2-Pin ESC T/R
|
Stock
12
From $0.0513 to $0.1472
Per Unit
|
Toshiba | Varactors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 3.8@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SSM3K35AMFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
Stock
6,836
From $0.0218 to $0.1697
Per Unit
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.25 | 1100@4.5V | 0.62@4.5V | 500 | 18@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K514NU,LF(T
Trans MOSFET N-CH Si 40V 12A Automotive AEC-Q101 6-Pin UDFN-B EP T/R
|
Stock
2,990
From $0.136 to $0.179
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain | Enhancement | 1 | 40 | ±20 | 12 | 11.6@10V | 7.5@4.5V | 2500 | 1110@20V | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8E65F,S1Q(S
Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220-L Tube
|
Stock
49
From $20.40 to $26.80
Per Unit
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 8 | 69 | 1.6 | 40 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4C06J-GR(TE85L,F
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
|
Stock
5
$0.501
Per Unit
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual Common Emitter | 120 | 2 | 120 | 5 | 0.1 | 200 to 300 | 200@2mA@6V | 300 | 0.3@1mA@10mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K781G,LF(S
Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R
|
Stock
1,800
From $0.198 to $0.547
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Drain Dual Source | Enhancement | 1 | 12 | ±8 | 1 | 7 | 18@4.5V | 5.4@4.5V | 2900 | 600@6V | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN4R203NC,L1Q(M
Trans MOSFET N-CH Si 30V 53A 8-Pin TSON EP Advance T/R
|
Stock
5,000
From $0.233 to $0.644
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 53 | 4.2@10V | 24@10V | 24 | 22000 | 1370@15V | U-MOS VIII | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7P60W5,RVQ(S
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
|
Stock
1,504
From $0.541 to $1.59
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 7 | 670@10V | 16@10V | 16 | 60000 | 490@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TPN7R506NH,L1Q(M
Trans MOSFET N-CH Si 60V 53A 8-Pin TSON EP Advance T/R
|
Stock
4,800
From $0.333 to $0.921
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 53 | 7.5@10V | 22@10V | 22 | 1900 | 1410@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS382(TE85L,F)
Diode Switching 85V 0.1A 4-Pin USQ T/R
|
Stock
1,651
From $0.114 to $0.329
Per Unit
|
Toshiba | Rectifiers | Switching Diode | Dual Parallel | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 4 | 100 | Tape and Reel | 4 | USQ | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS09(TE85L,Q,M)
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
|
Stock
3
$0.0965
Per Unit
|
Toshiba | Rectifiers | Schottky Diode | Single | 30 | 1.5@Ta=84C | 30 | 0.46 | 50 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7J90E,S1E(S
Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
|
Stock
27
From $1.50 to $3.36
Per Unit
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 7 | 2000@10V | 32@10V | 200000 | 1350@25V | 3 | TO-3PN | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J215FE(TE85L,F
Trans MOSFET P-CH Si 20V 3.4A 6-Pin ES T/R
|
Stock
4,000
From $0.153 to $0.48
Per Unit
|
Toshiba | MOSFETs | Small Signal | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1 | 3.4 | 59@4.5V | 10.4@4.5V | 500 | 630@10V | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN2116MFV,L3F(T
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin VESM T/R
|
Stock
8,000
From $0.0236 to $0.074
Per Unit
|
Toshiba | Digital BJT - Pre-Biased | PNP | Single | 50 | 4.7 | 0.47 | 0.1 | 50@10mA@5V | 150 | 0.3@0.5mA@5mA | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No |