| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Continuous Drain Current (A) | 4 |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 42.7@4.5V |
| Typical Gate Charge @ Vgs (nC) | 12.8@4.5V |
| Typical Input Capacitance @ Vds (pF) | 840@10V |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.7 mm |
| Package Width | 1.7 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Supplier Package | UF |
| Pin Count | 6 |
