NXP Semiconductors Diodes, Transistors and Thyristors
1,135 NXP Semiconductors Diodes, Transistors and Thyristors
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| Part No. | Price | Stock | Manufacturer | Category | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BT131-800D,112
TRIAC 800V 13.7A 3-Pin TO-92 Bulk
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NXP Semiconductors | TRIACs | 1 | 800 | 7 | 10 | 1.5@1.4A | 800 | 0.5 | Bulk | 3 | TO-92 | No | Unknown | Unknown | Unknown | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA312-600B/DG,127
TRIAC 600V 12A(RMS) 110A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 2000(Typ) | 100 | 1 | 600 | 50 | 60 | 1.6@15A | 12 | 600 | 0.5 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R2-25YLC,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 79000 | 100 | 3.4@10V | 30@10V|14@4.5V|26@10V | 26|30 | 1781@12V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU530R
Trans RF BJT NPN 16V 0.065A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | RF BJT | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.065 | 8V/15mA | 450 | 50 to 120 | 60@10mA@8V | 0.65 | 26 | 10(Typ) | 19.5 | 11000(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T21H450W23SR6 Trans RF MOSFET N-CH 65V 6-Pin T/R |
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NXP Semiconductors | RF FETs | MOSFET | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 15.4 | 2110 | 87(Typ) | 2200 | 6 | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT169B,126
SCR Diode 200V 0.8A(RMS) 9A 3-Pin SPT Ammo
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 800(Typ) | 50 | 0.8 | 200 | 0.2 | 5 | 1.7@1.2A | 5 | 0.8 | 200 | 0.5 | 0.1 | Ammo | 3 | SPT | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S18120HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | RF FETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 65 | 10 | 18.2 | 1805 | 72(Typ) | 1880 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK754R7-60E,127
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | 20 | 234000 | 100 | 4.6@10V | 82@10V | 82 | 4670@25V | Rail | 3 | TO-220AB | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF909WR,115
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | RF FETs | N | Dual | Enhancement | 2 | 7 | 6 | 280 | 0.04 | 3.6@5V@Gate 1|2.3@5V@Gate 2 | 1000 | 2.8 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ACT102H-600D,118
TRIAC 600V 8.8A 8-Pin SO T/R
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NXP Semiconductors | TRIACs | 300(Min) | 50 | 0.9 | 600 | 5 | 20 | 1.2@0.3A | 600 | 0.002 | Tape and Reel | 8 | SO | No | Unknown | Unknown | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1203,115
Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | RF FETs | N | Dual Dual Gate | Enhancement | 2 | 10 | 6 | 200 | 0.03 | 2.6@5V@Gate 1|3@5V@Gate 2 | 32.5@Amp A|34@Amp B | 7 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1205C,115
Trans RF FET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | RF FETs | N | Dual | Enhancement | 2 | 6 | 6 | 180 | 0.03 | 2.2@5V@Gate 1|3@5V@Gate 2@Amp A|2@5V@Gate 1|3.4@5V@Gate 2@Amp B | 35 | 1.9@Amp A|2.1@Amp B | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN-230MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
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From $1,399.65 to $1,682.36
Per Unit
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NXP Semiconductors | RF FETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | 21.1 | 1.8 | 115(Typ) | 250 | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PHN203,518
Trans MOSFET N-CH 30V 6.3A 8-Pin SO T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 30 | ±20 | 2000 | 6.3 | 30@10V | 14.6@10V | 14.6 | 560@20V | Tape and Reel | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW62,143
Diode Switching 75V 0.25A 2-Pin ALF
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NXP Semiconductors | Rectifiers | Switching Diode | Single | 75 | 0.25 | 4 | 1@0.1A | 5 | 350 | 4 | 2 | ALF | DO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB179LX,315
Varactor Diode Single 30V 18.2pF 2-Pin SOD T/R
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NXP Semiconductors | Varactors | Tuner|VCO | UHF | Single | 30 | 0.01 | 8.45 | 1V/28V | 18.2@1V | Tape and Reel | 2 | SOD | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1102,115
Trans RF MOSFET N-CH 7V 0.04A 6-Pin TSSOP T/R
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NXP Semiconductors | RF FETs | N | Dual | Enhancement | 2 | 7 | 6 | 200 | 0.04 | 2.8@5V@Gate 1|7(Max)@5V@Gate 2 | 2.8 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG540W/X,115
Trans RF BJT NPN 15V 0.12A 500mW 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | RF BJT | NPN | Si | Single Dual Emitter | 15 | 20 | 1 | 2.5 | 0.12 | 8V/40mA | 500 | 50 to 120 | 100@40mA@8V | 0.9 | 16(Max) | 21(Typ) | 34 | 9000(Typ) | 2.4 | Tape and Reel | 4 | CMPAK | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT151-500C,127
Thyristor SCR 500V 110A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 1000(Typ) | 50 | 1.5 | 500 | 15 | 20 | 1.75@23A | 5 | 500 | 7.5 | 0.5 | Tube | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR94A,215
Trans RF BJT NPN 15V 0.025A 300mW Automotive AEC-Q101 3-Pin TO-236AB T/R
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NXP Semiconductors | RF BJT | NPN | Single | 15 | 20 | 1 | 2 | 0.025 | 300 | 50 to 120 | 65@15mA@10V | 5000(Typ) | 3(Typ) | Tape and Reel | 3 | TO-236AB | TO | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF5014H-500MHZ Trans RF MOSFET N-CH 125V 3-Pin NI-360H-2SB Each |
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NXP Semiconductors | RF FETs | MOSFET | GaN | N | Single | Enhancement | 1 | Pulse | 125 | 0 | 2.3 | 232000 | 51@50V | 18 | 1 | 125(Typ) | 2700 | Each | 3 | NI-360H-2SB | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF13750H-915MHZ
Trans RF MOSFET N-CH 105V 5-Pin NI-1230H
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$1,260.00
Per Unit
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NXP Semiconductors | RF FETs | MOSFET | N | Enhancement | CW | 105 | 10 | 2.3 | 1333000 | 20.5 | 700 | 850(Typ) | 1300 | 5 | NI-1230H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAW62,113
Diode Switching 75V 0.25A 2-Pin ALF T/R
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NXP Semiconductors | Rectifiers | Switching Diode | Single | 75 | 0.25 | 4 | 1@0.1A | 5 | 350 | 4 | Tape and Reel | 2 | ALF | DO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1216,115
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | RF FETs | N | Dual | Enhancement | 2 | 6 | 1 | 180 | 0.03 | 2.5@5V@Gate 1|2.4@5V@Gate 2 | 34 | 5 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUJ303A,127
Trans GP BJT NPN 500V 5A 100000mW 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | GP BJT | NPN | Bipolar Power | Si | Single | 500 | 1 | 1.3@0.6A@3A | 5 | 100000 | 2 to 30 | 10@5mA@5V|14@500mA@5V | 1.5@0.6A@3A | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | No |