CoolGaN™ – The New Power Paradigm

Infineon adds GaN for ultimate efficiency and reliability

Infineon’s CoolGaN™ family of HEMT devices emerge from the newly developed gallium nitride on silicon process (GaN-on-Si). Operation at higher switching frequencies while keeping the losses to a very low, manageable level is one advantage. Plus, GaN's zero reverse recovery charge enables new power supply topologies, such as a full-bridge totem pole PFC topology. Check out the newly launched IGLD60R190D1: CoolGaN™ 600V e-mode power transistor, in the smallest (8x8 mm) package within Infineon's GaN portfolio suitable for a broad power range.

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