Diodes IncorporatedZTX451STZ通用双极型晶体管
Trans GP BJT NPN 60V 1A 1000mW 3-Pin E-Line Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 60 | |
| 5 | |
| -55 to 200 | |
| 1.1@15mA@150mA | |
| 0.35@15mA@150mA | |
| 1 | |
| 100 | |
| 100@150mA@10V|15@1A@10V | |
| 1000 | |
| -55 | |
| 200 | |
| Box | |
| Mounting | Through Hole |
| Package Height | 3.9 mm |
| Package Width | 2.28 mm |
| Package Length | 4.57 mm |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
Implement this versatile NPN ZTX451STZ GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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