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ZTX451STZ|DIODEZTX|simage
ZTX451STZ|DIODEZTX|limage
GP BJT

ZTX451STZ

Trans GP BJT NPN 60V 1A 1000mW 3-Pin E-Line Box

Diodes Incorporated
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    80
  • Maximum Collector-Emitter Voltage (V)
    60
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    -55 to 200
  • Maximum Base-Emitter Saturation Voltage (V)
    1.1@15mA@150mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.35@15mA@150mA
  • Maximum DC Collector Current (A)
    1
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    100@150mA@10V|15@1A@10V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Box
  • Mounting
    Through Hole
  • Package Height
    3.9
  • Package Width
    2.28
  • Package Length
    4.57
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    E-Line
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources