| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 18.2 | |
| 100 | |
| 1 | |
| 9.5@10V | |
| 9.2@5V|17@10V | |
| 17 | |
| 2.8 | |
| 4.1 | |
| 15 | |
| 1220@15V | |
| 98@15V | |
| 1 | |
| 230 | |
| 3000 | |
| 8 | |
| 20|16 | |
| 20|23 | |
| 20|13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.8@10V|11@4.5V | |
| 3 | |
| 50 | |
| 80 | |
| 0.8 | |
| 3.8 | |
| 25 | |
| 1.2 | |
| 1.2 | |
| 20 | |
| 13.8 | |
| Mounting | Surface Mount |
| Package Height | 1.38 mm |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
As an alternative to traditional transistors, the SI4686DY-T1-E3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。