| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 18.2 | |
| 100 | |
| 1 | |
| 9.5@10V | |
| 9.2@5V|17@10V | |
| 17 | |
| 2.8 | |
| 4.1 | |
| 15 | |
| 1220@15V | |
| 98@15V | |
| 1 | |
| 230 | |
| 3000 | |
| 8 | |
| 20|16 | |
| 20|23 | |
| 20|13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.8@10V|11@4.5V | |
| 3 | |
| 50 | |
| 80 | |
| 0.8 | |
| 3.8 | |
| 25 | |
| 1.2 | |
| 1.2 | |
| 20 | |
| 13.8 | |
| Mounting | Surface Mount |
| Package Height | 1.38 mm |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
As an alternative to traditional transistors, the SI4686DY-T1-E3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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