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onsemiMMBTA14LT1G达林顿双极型晶体管
Trans Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 10 | |
| 0.3 | |
| 0.1 | |
| -55 to 150 | |
| 125(Min) | |
| 1.5@0.1mA@100mA | |
| 10000@10mA@5V|20000@100mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Look no further than ON Semiconductor's NPN MMBTA14LT1G Darlington transistor, which can amplify the signal to provide higher current gains. This Darlington transistor array's maximum emitter base voltage is 10 V. This product's maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V.
| EDA / CAD Models |
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