onsemiMMBT6520LT1G通用双极型晶体管

Trans GP BJT PNP 350V 0.5A 300mW 3-Pin SOT-23 T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP MMBT6520LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.

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库存总量: 20,489 个零件

Regional Inventory: 11,489

    Total$0.26Price for 1

    11,489 In stock: 可以在 2 天内配送

    • Service Fee  $7.00

      可以在 2 天内配送

      Ships from:
      美国
      Date Code:
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      Manufacturer Lead Time:
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      Maximum Of:
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      Country Of origin:
      中国
         
      • Price: $0.2600
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以在 2 天内配送

      Ships from:
      美国
      Date Code:
      2313+
      Manufacturer Lead Time:
      8 星期
      Country Of origin:
      中国
      • In Stock: 8,489
      • Price: $0.2600
    • (3000)

      可以在 2 天内配送

      Increment:
      3000
      Ships from:
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      Date Code:
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      Manufacturer Lead Time:
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      Country Of origin:
      马来西亚
      • In Stock: 3,000
      • Price: $0.0636
    • (3000)

      可以在 3 天内配送

      Ships from:
      荷兰
      Date Code:
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      Manufacturer Lead Time:
      8 星期
      Country Of origin:
      中国
      • In Stock: 9,000
      • Price: $0.0628

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