| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 88 | |
| 40@10V | |
| 180@10V | |
| 180 | |
| 6300@25V | |
| 600000 | |
| 25 | |
| 24 | |
| 96 | |
| 25 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 5.1(Max) mm |
| Package Width | 14(Max) mm |
| Package Length | 16.05(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-268 |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXTT88N30P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 600000 mW. This device is made with polarht technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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