IXYSIXTT88N30PMOSFETs

Trans MOSFET N-CH 300V 88A 3-Pin(2+Tab) TO-268

In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXTT88N30P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 600000 mW. This device is made with polarht technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

A datasheet is only available for this product at this time.

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