| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 88 | |
| 40@10V | |
| 180@10V | |
| 180 | |
| 6300@25V | |
| 600000 | |
| 25 | |
| 24 | |
| 96 | |
| 25 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 5.1(Max) mm |
| Package Width | 14(Max) mm |
| Package Length | 16.05(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-268 |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXTT88N30P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 600000 mW. This device is made with polarht technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Dispositivos médicos alimentados por IA
Libro blanco Arrow: consejos e información sobre IA para el diseño de soluciones de diagnóstico y terapia rápidas y seguras.

