| 欧盟RoHS指令 | Compliant with Exemption |
| 环保无铅 | Active |
| 美国海关商品代码 | EA |
| Automotive | Yes |
| PPAP | Unknown |
| 产品类别 | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 850 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 3.5 |
| Maximum Drain-Source Resistance (mOhm) | 2500@10V |
| Typical Gate Charge @ Vgs (nC) | 7@10V |
| Typical Gate Charge @ 10V (nC) | 7 |
| Typical Input Capacitance @ Vds (pF) | 247@25V |
| Maximum Power Dissipation (mW) | 35000 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 27 |
| Typical Turn-Off Delay Time (ns) | 28 |
| Typical Turn-On Delay Time (ns) | 13 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate-Source Voltage (V) | 30 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Mounting | Through Hole |
| Package Height | 16.07(Max) |
| Package Width | 4.9(Max) |
| Package Length | 10.36(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | OVERMOLDED TO-220 |
| Pin Count | 3 |
