제품 기술 사양
RoHS (Unión Europea)
Compliant with Exemption
Estatus de pieza
Active
Código HTS
EA
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
850
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
5.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
3.5
Maximum Drain-Source Resistance (mOhm)
2500@10V
Typical Gate Charge @ Vgs (nC)
7@10V
Typical Gate Charge @ 10V (nC)
7
Typical Input Capacitance @ Vds (pF)
247@25V
Maximum Power Dissipation (mW)
35000
Typical Fall Time (ns)
20
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
28
Typical Turn-On Delay Time (ns)
13
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate-Source Voltage (V)
30
Maximum Diode Forward Voltage (V)
1.4
Mounting
Through Hole
Package Height
16.07(Max)
Package Width
4.9(Max)
Package Length
10.36(Max)
PCB changed
3
Tab
Tab
Supplier Package
OVERMOLDED TO-220
Pin Count
3