| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 53 | |
| 140@10V | |
| 250@10V | |
| 250 | |
| 18000@25V | |
| 1040000 | |
| 26 | |
| 29 | |
| 110 | |
| 36 | |
| -55 | |
| 150 | |
| Mounting | Screw |
| Package Height | 9.6(Max) mm |
| Package Width | 25.42(Max) mm |
| Package Length | 38.23(Max) mm |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| 4 | |
| Lead Shape | Screw |
This IXFN60N80P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 1040000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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