IXYSIXBK55N300IGBT 芯片

Trans IGBT Chip N-CH 3000V 130A 625W 3-Pin(3+Tab) TO-264

Minimize the current at your gate with the IXBK55N300 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 3000 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.

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