| 欧盟RoHS指令 | Compliant |
| 环保无铅 | LTB |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | GaN |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 650 |
| Maximum Gate-Source Voltage (V) | 7 |
| Maximum Continuous Drain Current (A) | 11 |
| Maximum Drain-Source Resistance (mOhm) | 195@6V |
| Typical Gate Charge @ Vgs (nC) | 2.2@6V |
| Typical Input Capacitance @ Vds (pF) | 70@400V |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 5 |
| Typical Turn-Off Delay Time (ns) | 8 |
| Typical Turn-On Delay Time (ns) | 5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 0.87 |
| Package Width | 8 |
| Package Length | 8 |
| PCB changed | 8 |
| Standard Package Name | DFN |
| Supplier Package | PDFN EP |
| Pin Count | 8 |
