| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | EA |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 20 |
| Maximum Gate Threshold Voltage (V) | 5.15 |
| Operating Junction Temperature (°C) | -40 to 150 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Gate-Source Leakage Current (nA) | 400 |
| Maximum IDSS (uA) | 380 |
| Maximum Drain-Source Resistance (mOhm) | 8.1(Typ)@18V |
| Typical Gate Charge @ Vgs (nC) | 297@18V |
| Typical Input Capacitance @ Vds (pF) | 8800@800V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 28@800V |
| Minimum Gate Threshold Voltage (V) | 3.45 |
| Typical Output Capacitance (pF) | 420 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 70 |
| Typical Turn-Off Delay Time (ns) | 73 |
| Typical Turn-On Delay Time (ns) | 53 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tray |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Typical Diode Forward Voltage (V) | 4.2 |
| Maximum Diode Forward Voltage (V) | 5.35 |
| Typical Gate Threshold Voltage (V) | 4.3 |
| Mounting | Screw |
| Package Height | 12.25 mm |
| Package Width | 33.8 mm |
| Package Length | 62.8 mm |
| PCB changed | 18 |
| Pin Count | 18 |
