| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Configuration | Dual Common Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 24 |
| Maximum Gate-Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 1.3 |
| Maximum Continuous Drain Current (A) | 6 |
| Maximum Gate-Source Leakage Current (nA) | 10000 |
| Typical Gate Charge @ Vgs (nC) | 29@4.5V |
| Typical Input Capacitance @ Vds (pF) | 2564@10V |
| Maximum Power Dissipation (mW) | 1450 |
| Typical Fall Time (ns) | 29 |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Typical Turn-On Delay Time (ns) | 10 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.2 mm |
| Package Width | 1.79 mm |
| Package Length | 1.79 mm |
| PCB changed | 4 |
| Supplier Package | X1-WLB |
| Pin Count | 4 |
| Lead Shape | Ball |
