| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | Unknown |
| 产品类别 | Power MOSFET |
| Configuration | Dual Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±12 |
| Maximum Continuous Drain Current (A) | 9.4 |
| Maximum Drain-Source Resistance (mOhm) | 14@10V |
| Typical Gate Charge @ Vgs (nC) | 17.9@4.5V |
| Typical Input Capacitance @ Vds (pF) | 1810@10V |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 7.7 |
| Typical Rise Time (ns) | 5.9 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Typical Turn-On Delay Time (ns) | 3.3 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 11@10V|12.6@4.5V|16.5@2.5V|23.4@1.8V |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
