Analog DevicesADL8106ACEZ射频放大器

ADL8106ACEZ: GaAs, pHEMT, Low Noise Amplifier, 20 GHz to 54 GHz

The ADL8106ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106ACEZ provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106ACEZ requires 120 mA from a 3V supply voltage (VDD) and features inputs and outputs that are internally matched to 50Ω, facilitating integration into multichip modules (MCMs).

Key Features and Benefits:

• •  Low noise figure of 3.0 dB typical at 30 GHz to 44 GHz
• •  High linearity of 21.5 dBm typical at 30 GHz to 44 GHz
• •  Wide bandwidth in a small form factor

Applications:

• •  General Purpose: Wideband, low noise, high linearity, 50Ω match, small package
• •  Aerospace and Defense
• •  Instrumentation and Measurement
• •  Communications

The ADL8106ACEZ can be evaluated with the ADL8106-EVALZ