Diodes Incorporated2DB1386Q-13通用双极型晶体管

Trans GP BJT PNP 20V 5A 1000mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101

If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's PNP 2DB1386Q-13 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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