Diodes Incorporated2DB1386Q-13GP BJT
Trans GP BJT PNP 20V 5A 1000mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 30 | |
| 20 | |
| 6 | |
| 1@0.1A@4A | |
| 5 | |
| 120@0.5A@2V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 mm |
| Largeur du paquet | 2.5 mm |
| Longueur du paquet | 4.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 | |
| Forme de sonde | Flat |
If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's PNP 2DB1386Q-13 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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