CoolSiC™ Automotive MOSFET 750 V

The demand for higher efficiency and power density in automotive power applications continues to surge, and as such the need for cutting-edge solutions to respond to current EVs trends. Infineon’s CoolSiC™ Automotive MOSFET 750 V G1 are the ideal solution for smaller, lighter, and more efficient on-board chargers. The 750 V SiC MOSFETs are optimized for a wide array of topologies including totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase-shifted full bridge (PSFB), empowering engineers to revolutionize on-board charger designs.

CoolSiC™ 750 V responds to EVs trends:

• Increased charging power
• Higher power density
• Maximizing efficiency
• Bidirectional capabilities
• 400 V and 800 V batteries
• System integration (x-in-1)

Infineon's CoolSiC™ Automotive MOSFETs 750 V G1 helps OBC designers to stay ahead of these trends. These MOSFETs come in a variety of packages, including TO-247-4, D2PAK-7, and the QDPAK TSC (top-side cooled), and in a very granular portfolio with typical R_DS(on) values from 8 mΩ up to 140 mΩ.

Features

• Highly robust 750 V SiC technology delivers enhanced robustness and reliability, providing compatibility with bus voltages beyond 500 V
• Granular portfolio ranging from 8 to 140 mΩ R_DS(on) @ 25°C
• Cutting-edge top-side cooling package (QDPAK) allows for increased power density, optimized power loop design and reduced system cost
• 100% avalanche tested to deliver highest quality and reliability
• Infineon extended qualification beyond stringent mission profile

Benefits

• Best-in-class R_DS(on) x Q_fr for superior efficiency in hard switching
• Excellent R_DS(on) x Q_oss & R_DS(on) x Q_G enable higher switching frequency in soft switching topologies
• Robustness against parasitic turn-ons allows for unipolar gate driving
• Infineon proprietary die-attach technology (.XT) delivers best-in-class thermal dissipation rate for equivalent die sizes
• Integrated Kelvin source connection optimizes switching behavior through improved gate control and reduced switching losses

Target applications

Uni- and bidirectional on-board chargers and HV-LV DCDC converters

• Hard-switching half bridges (CCM Totem Pole, 3-level)
• Soft-switching topologies (LLC, CLLC, DAB, PSFB)

Enabling higher power density and reduced manufacturing effort with Infineon's top-side cooled CoolSiC™ 750 V G1 MOSFETs in QDPAK TSC package

The innovative top-side cooled QDPAK package, housing the CoolSiC™ Automotive MOSFETs G1, is instrumental in achieving power density levels beyond 4 kW/l for OBCs. It enables increased power density by optimizing PCB space and offers several advantages:

1. Enhanced Thermal Performance: The Kelvin-source connection and lower parasitic source inductance reduce switching losses, extending system lifetime by minimizing device and board temperatures.

2. Flexible PCB Layout: This package allows for new assembly areas and offers more flexible PCB layout, enhancing design flexibility.

3. Efficient Heat Dissipation: Direct attachment of the packages to the exposed OBC enclosure using a thermal interface facilitates faster heat dissipation, while connecting the top side of the package to the heatsink improves thermal performance, allowing higher power dissipation and lower chip temperatures.

4. Cost-Effective Manufacturing: The top-side cooled MOSFETs enable a high level of automation, reducing manufacturing effort for OBCs and keeping costs down.

5. Improved Efficiency: Decoupling of the device and PCB thermal paths for optimized cooling minimizes conduction and switching losses, ultimately improving efficiency.

Infineon's top-side cooled CoolSiC™ G1 MOSFETs enable OBCs to deliver more power from smaller enclosures, reducing charging times for vehicle owners and making electric vehicles a more attractive proposition for consumers.

Download application note

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