| 유럽 연합 RoHS 명령어 | Compliant |
| 친환경 무연 | Active |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 50 |
| Maximum Drain-Source Resistance (mOhm) | 8.2@10V |
| Typical Gate Charge @ Vgs (nC) | 15@4.5V|28@10V |
| Typical Input Capacitance @ Vds (pF) | 1990@30V |
| Maximum Power Dissipation (mW) | 81000 |
| Typical Fall Time (ns) | 17 |
| Typical Rise Time (ns) | 5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Through Hole |
| Package Height | 8.59 |
| Package Width | 4.45 |
| Package Length | 10.16 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| Pin Count | 3 |
