| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 8.8 | |
| 250 | |
| 1 | |
| 195@10V | |
| 11.7@4.5V|23.2@10V | |
| 23.2 | |
| 4.8 | |
| 3.5 | |
| 98 | |
| 1055@50V | |
| 41@50V | |
| 1 | |
| 65 | |
| 2500 | |
| 9 | |
| 12 | |
| 33 | |
| 7 | |
| -55 | |
| 150 | |
| 15 | |
| 0.8 | |
| 50 | |
| 1.5 | |
| 1.2 | |
| 11.5 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
This SUD09P10-195-GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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