Infineon Technologies AGSPW20N60C3FKSA1MOSFETs
Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| CoolMOS | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 3.9 | |
| 20.7 | |
| 190@10V | |
| 87@10V | |
| 87 | |
| 2400@25V | |
| 208000 | |
| 4.5 | |
| 5 | |
| 67 | |
| 10 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21.1(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.13(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
Create an effective common drain amplifier using this SPW20N60C3FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 208000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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