onsemiSBC847BPDW1T1GGP BJT

Trans GP BJT NPN/PNP 45V 0.1A 380mW 6-Pin SC-88 T/R Automotive AEC-Q101

The npn and PNP SBC847BPDW1T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V.

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      Ships from:
      미국
      Date Code:
      2246+
      Manufacturer Lead Time:
      0 주
      Country Of origin:
      중국
      • In Stock: 23,866 부품
      • Price: $0.0497
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      Ships from:
      네덜란드
      Date Code:
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      30 주
      Country Of origin:
      중국
      • In Stock: 24,000 부품
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