onsemiSBC847BPDW1T1GGP BJT

Trans GP BJT NPN/PNP 45V 0.1A 380mW 6-Pin SC-88 T/R Automotive AEC-Q101

The npn and PNP SBC847BPDW1T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V.

Import TariffMay apply to this part

Total en Stock: 47,866 piezas

Regional Inventory: 23,866

    Total$0.05Price for 1

    23,866 en existencias: Se puede enviar mañana

    • Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2246+
      Manufacturer Lead Time:
      0 semanas
      Country Of origin:
      China
      • In Stock: 23,866 piezas
      • Price: $0.0497
    • Se puede enviar en 2 días

      Ships from:
      Países Bajos
      Date Code:
      2329+
      Manufacturer Lead Time:
      30 semanas
      Country Of origin:
      China
      • In Stock: 24,000 piezas
      • Price: $0.2279

    Sistemas de drones más inteligentes

    Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.