onsemiNVTFS5124PLTWGMOSFETs
Trans MOSFET P-CH 60V 2.4A Automotive AEC-Q101 8-Pin WDFN EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 2.5 | |
| 2.4 | |
| 100 | |
| 1 | |
| 260@10V | |
| 3.5@4.5V|6@10V | |
| 6 | |
| 250@25V | |
| 3000 | |
| 10 | |
| 14 | |
| 13 | |
| 7 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| 8 | |
| Lead Shape | No Lead |
This NVTFS5124PLTWG power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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