| 유럽 연합 RoHS 명령어 | Compliant with Exemption |
| 친환경 무연 | Active |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Configuration | Single Quad Drain Quad Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 25 |
| Maximum Gate-Source Voltage (V) | 16 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 310 |
| Maximum Drain-Source Resistance (mOhm) | 0.58@10V |
| Typical Gate Charge @ Vgs (nC) | 25@4.5V|33@6V|55@10V |
| Typical Input Capacitance @ Vds (pF) | 3980@12V |
| Maximum Power Dissipation (mW) | 87000 |
| Typical Fall Time (ns) | 57 |
| Typical Rise Time (ns) | 6 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Typical Turn-On Delay Time (ns) | 4 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
