| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 140 | |
| 100 | |
| 6 | |
| -65 to 150 | |
| 0.5 | |
| 1@0.1A@1A | |
| 0.05@10mA@0.1A|0.09@0.1A@1A|0.15@0.2A@2A|0.25@0.3A@3A | |
| 3 | |
| 100 | |
| 200@0.1A@2V|200@0.5A@2V|120@1A@2V|80@3A@2V | |
| 2100 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.28 mm |
| Package Width | 6.1 mm |
| Package Length | 6.54 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
The versatility of this NPN NSS1C301ET4G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1400 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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