onsemiMMBT5551M3T5GGP BJT

Trans GP BJT NPN 160V 0.06A 640mW 3-Pin SOT-723 T/R

Design various electronic circuits with this versatile NPN MMBT5551M3T5G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 640 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

120 부품 : 4 일 이내 배송

    Total$1.04Price for 50

    • 4 일 이내 배송

      Ships from:
      홍콩
      Date Code:
      +
      Manufacturer Lead Time:
      0 주
      • In Stock: 120 부품
      • Price: $0.0208

    Smarter Drone Systems from Concept to Deployment

    Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.