onsemiMMBT5551M3T5G通用双极型晶体管

Trans GP BJT NPN 160V 0.06A 640mW 3-Pin SOT-723 T/R

Design various electronic circuits with this versatile NPN MMBT5551M3T5G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 640 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

120 个零件: 可以在 4 天内配送

    Total$1.04Price for 50

    • 可以在 4 天内配送

      Ships from:
      香港
      Date Code:
      +
      Manufacturer Lead Time:
      0 星期
      • In Stock: 120
      • Price: $0.0208

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