| 유럽 연합 RoHS 명령어 | Compliant |
| 미국수출통제분류ECCN 인코딩 | EAR99 |
| 친환경 무연 | Active |
| 미국 세관 상품 코드 | EA |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Material | SiC |
| Configuration | Single Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 19 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 27@15V |
| Typical Gate Charge @ Vgs (nC) | 162@15V |
| Typical Input Capacitance @ Vds (pF) | 4818@1000V |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| PCB changed | 3 |
| Supplier Package | Die |
| Pin Count | 3 |
