| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | EA |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Material | SiC |
| Configuration | Single Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 19 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 27@15V |
| Typical Gate Charge @ Vgs (nC) | 162@15V |
| Typical Input Capacitance @ Vds (pF) | 4818@1000V |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| PCB changed | 3 |
| Supplier Package | Die |
| Pin Count | 3 |
