TT Electronics / Semelab 다이오드, 트랜지스터 및 사이리스터
| 부품 번호 | Price | 주식 | Manufacturer | Category | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2N6661-JQR-B
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39
|
|
TT Electronics / Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 90 | ±20 | 725 | 0.9 | 4000@10V | 50(Max)@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDX65B BIPOLAR NPN DARLINGTON DEVICE |
|
TT Electronics / Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| BYV34-500P1 Diode Switching 500V 20A 3-Pin(2+Tab) TO-3 |
|
TT Electronics / Semelab | Rectifiers | Switching Diode | Single | 500 | 20 | 100 | 1.7 | 50 | 50(Typ) | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
2N6845
Trans MOSFET P-CH 100V 4A 3-Pin TO-39
|
|
TT Electronics / Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 20000 | 4 | 690@10V | 16.3(Max)@10V | 16.3(Max) | 380@25V | 3 | TO-39 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| SML10SIC06YC Diode Schottky 600V 10A 3-Pin(3+Tab) TO-257AA |
|
TT Electronics / Semelab | Rectifiers | Schottky Diode | Dual Common Cathode | 600 | 10 | 250 | 1.8 | 50 | 100000 | 3 | TO-257AA | TO | No | No | No | No | No | 3A001.h | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N6059 Trans Darlington NPN 100V 12A 3-Pin(2+Tab) TO-3 |
|
TT Electronics / Semelab | Darlington BJT | NPN | Single | 100 | 12 | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||
2N3947
Trans GP BJT NPN 40V 0.2A 360mW 3-Pin TO-18
|
|
TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Single | 40 | 1 | 0.2 | 360 | 50 to 120 | 100@1mA@10V | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||
| IRFM460 Power MOSFET Thru Hole |
|
TT Electronics / Semelab | MOSFETs | 3 | TO-254AA | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3637CSM-JQR-B PNP SMT Silicon Transistor |
|
TT Electronics / Semelab | GP BJT | Unknown | Unknown | Unknown | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| D2019UKTR Gold Metallised Multi-Purpose Silicon Dmos RF FET |
|
TT Electronics / Semelab | RF FETs | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6678 Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 |
|
TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 300 | 1 | 8 | 1.5@3A@15A | 15 | 175000 | 2 to 30 | 8@15A@3V | 1@3A@15A | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N5322
Trans GP BJT PNP 75V 1.2A 1000mW 3-Pin TO-39
|
|
TT Electronics / Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 75 | 100 | 1 | 6 | 1.2 | 1000 | 2 to 30|30 to 50 | 10@1A@2V|30@500mA@4V | 0.7@50mA@500mA | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BUZ50A-220M-ISO Fet Devices |
|
TT Electronics / Semelab | JFETs | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS16-QR-B Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-220M |
|
TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 120 | 120 | 1 | 5 | 8 | 43750 | 2 to 30|30 to 50 | 40@0.5A@2V|15@4A@2V | 0.4@0.05A@0.5A|1.5@0.4A@4A | 3 | TO-220M | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2081UK.F Trans RF MOSFET N-CH 65V 0.2A 4-Pin(3+Tab) SOT-223 |
|
TT Electronics / Semelab | RF FETs | Si | N | Single Dual Drain | Enhancement | 1 | 65 | ±20 | 2000 | 0.2 | 12(Max)@0V | 11(Min) | 0 | 0.75 | 2500 | 4 | SOT-223 | SOT | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| BSS52 Bipolar Power Transistor |
|
TT Electronics / Semelab | GP BJT | Unknown | Unknown | Unknown | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB16-100M Diode Schottky 100V 16A 3-Pin(3+Tab) TO-257AB |
|
TT Electronics / Semelab | Rectifiers | Schottky Diode | Dual Common Cathode | 100 | 16 | 245 | 1 | 500 | 3 | TO-257AB | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
BC477
Trans GP BJT PNP 80V 0.1A 360mW 3-Pin TO-18
|
|
TT Electronics / Semelab | GP BJT | PNP | Bipolar Power | Single | 80 | 1 | 0.1 | 360 | 50 to 120 | 50@2mA@5V | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| 2N5153-220M Trans GP BJT NPN 80V 5A 4400mW 3-Pin(3+Tab) TO-257AB |
|
TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 100 | 1 | 5.5 | 1.45@250mA@2.5A|2.2@500mA@5A | 5 | 40 | 4400 | 30 to 50|50 to 120 | 40@5A@5V|70@2.5A@5V|50@50mA@5V | 7 | 250(Max) | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| D5029UK Trans RF MOSFET N-CH 125V 21A 5-Pin Case DR |
|
TT Electronics / Semelab | RF FETs | Si | N | Dual Common Source | Enhancement | 1 | 125 | ±20 | 438000 | 21 | 420(Max)@50V | 13(Min) | 1 | 350 | 200 | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
| D2218UK Trans RF MOSFET 40V 16A 3-Pin Case DP |
|
TT Electronics / Semelab | RF FETs | Si | Single | 1 | 40 | ±20 | 7 | 70000 | 16 | 96(Max)@0V | 10(Min) | 0 | 1000 | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
|
TT Electronics / Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 75000 | 9 | 400@10V | 30@10V | 30 | 600@25V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||
2N2243A
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39
|
|
TT Electronics / Semelab | GP BJT | NPN | Bipolar Power | Single | 80 | 120 | 1 | 7 | 1.3@15mA@150mA | 1 | 800 | 2 to 30|30 to 50 | 15@0.1mA@10V|30@10mA@10V|40@150mA@10V|15@500mA@10V|30@150mA@1V | 0.25@15mA@150mA | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| 2N6849 Trans MOSFET P-CH 100V 5.8A 3-Pin TO-39 |
|
TT Electronics / Semelab | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 20833 | 5.8 | 300@10V | 25@15V | 845@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N3209XCSM
Trans GP BJT PNP 20V 0.2A 300mW 3-Pin CLLCC-1
|
|
TT Electronics / Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 20 | 20 | 1 | 4 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 0.2 | 420 | 300 | 2 to 30|30 to 50 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 5(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 3 | CLLCC-1 | LCC | No | No | No | No | EAR99 | No | No |