MOSFET

TK20N60W,S1VF

Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247 Tube

Toshiba

製品技術仕様

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  ±30

• Maximum Gate Threshold Voltage (V)

  3.7

• Maximum Continuous Drain Current (A)

  20

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  155@10V

• Typical Gate Charge @ Vgs (nC)

  48@10V

• Typical Gate Charge @ 10V (nC)

  48

• Typical Input Capacitance @ Vds (pF)

  1680@300V

• Maximum Power Dissipation (mW)

  165000

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  25

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  20.95

• Package Width

  5.02

• Package Length

  15.94

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole