MOSFET

TK10E60W,S1VX

Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220 Tube

Toshiba

製品技術仕様

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  ±30

• Maximum Gate Threshold Voltage (V)

  3.7

• Maximum Continuous Drain Current (A)

  9.7

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  380@10V

• Typical Gate Charge @ Vgs (nC)

  20@10V

• Typical Gate Charge @ 10V (nC)

  20

• Typical Input Capacitance @ Vds (pF)

  700@300V

• Maximum Power Dissipation (mW)

  100000

• Typical Fall Time (ns)

  5.5

• Typical Rise Time (ns)

  22

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  8.59

• Package Width

  4.45

• Package Length

  10.16

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220

• Pin Count

  3

• Lead Shape

  Through Hole