MOSFET

STL8DN6LF3

Trans MOSFET N-CH 60V 20A 8-Pin Power Flat EP T/R Automotive AEC-Q101

STMicroelectronics

製品技術仕様

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  COMPONENTS

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Dual

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2.5

• Maximum Continuous Drain Current (A)

  20

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  30@10V

• Typical Gate Charge @ Vgs (nC)

  13@10V

• Typical Gate Charge @ 10V (nC)

  13

• Typical Input Capacitance @ Vds (pF)

  668@25V

• Maximum Power Dissipation (mW)

  65000

• Typical Fall Time (ns)

  5

• Typical Rise Time (ns)

  7.7

• Typical Turn-Off Delay Time (ns)

  32.5

• Typical Turn-On Delay Time (ns)

  9

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.95(Max)

• Package Width

  6

• Package Length

  5

• PCB changed

  8

• Supplier Package

  Power Flat EP

• Pin Count

  8

• Lead Shape

  No Lead