MOSFET

SSM3J35CT,L3F

Trans MOSFET P-CH Si 20V 0.1A 3-Pin CST T/R

Toshiba

製品技術仕様

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  NRND

• 미국 세관 상품 코드

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Category

  Small Signal

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  20

• Maximum Gate-Source Voltage (V)

  ±10

• Maximum Gate Threshold Voltage (V)

  1

• Maximum Continuous Drain Current (A)

  0.1

• Maximum Gate-Source Leakage Current (nA)

  10000

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  8000@4V

• Typical Input Capacitance @ Vds (pF)

  12.2@3V

• Maximum Power Dissipation (mW)

  100

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Width

  1

• Package Length

  0.6

• PCB changed

  3

• Supplier Package

  CST

• Pin Count

  3

• Lead Shape

  No Lead