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SI4136DYT1GE3|VISHAY|simage
SI4136DYT1GE3|VISHAY|limage
MOSFET

SI4136DY-T1-GE3

Trans MOSFET N-CH 20V 46A 8-Pin SOIC N T/R

Vishay
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製品技術仕様
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Process Technology
    0.18um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.2
  • Maximum Continuous Drain Current (A)
    46
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    2@10V
  • Typical Gate Charge @ Vgs (nC)
    34@4.5V|73@10V
  • Typical Gate Charge @ 10V (nC)
    73
  • Typical Input Capacitance @ Vds (pF)
    4560@10V
  • Maximum Power Dissipation (mW)
    3500
  • Typical Fall Time (ns)
    23
  • Typical Rise Time (ns)
    26
  • Typical Turn-Off Delay Time (ns)
    50
  • Typical Turn-On Delay Time (ns)
    34
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.55(Max)
  • Package Width
    4(Max)
  • Package Length
    5(Max)
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC N
  • Pin Count
    8
  • Lead Shape
    Gull-wing
注文数量

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