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Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
製品技術仕様
유럽 연합 RoHS 명령어
Compliant with Exemption
미국수출통제분류ECCN 인코딩
EAR99
친환경 무연
Active
미국 세관 상품 코드
8541.29.00.55
SVHC
Yes
SVHC 기준 초과
Yes
Automotive
Yes
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
22
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
89
Maximum Drain-Source Resistance (mOhm)
30@18V
Typical Gate Charge @ Vgs (nC)
137@18V
Typical Gate Charge @ 10V (nC)
151
Typical Input Capacitance @ Vds (pF)
3175@800V
Maximum Power Dissipation (mW)
348000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
24
Typical Turn-Off Delay Time (ns)
48
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Mounting
Through Hole
Package Height
22.54
Package Width
5
Package Length
15.6
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Family/Series
NTH4L022N120M3S
ROHS Version
2011/65/EU, 2015/863
Quantity Packaging
450
注文数量