GP BJT

JANSF2N2222A

Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18

Semicoa Semiconductors

製品技術仕様

• 유럽 연합 RoHS 명령어

  Not Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active-Unconfirmed

• 미국 세관 상품 코드

  EA

• Automotive

  Unknown

• PPAP

  Unknown

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  75

• Maximum Collector-Emitter Voltage (V)

  50

• Maximum Base-Emitter Voltage (V)

  6

• Operating Junction Temperature (°C)

  -65 to 200

• Maximum Base-Emitter Saturation Voltage (V)

  1.2@15mA@150mA|2@50mA@500mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@15mA@150mA|1@50mA@500mA

• Maximum DC Collector Current (A)

  0.8

• Minimum DC Current Gain

  50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Diameter

  5.84(Max)

• Mounting

  Through Hole

• Package Height

  5.33(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-18

• Pin Count

  3

• Lead Shape

  Through Hole