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製品技術仕様
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.1
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
10
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
11.7@4.5V
Typical Gate Charge @ Vgs (nC)
14@4.5V
Typical Gate to Drain Charge (nC)
6.3
Typical Gate to Source Charge (nC)
1.5
Typical Reverse Recovery Charge (nC)
12
Typical Input Capacitance @ Vds (pF)
1110@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
180@10V
Minimum Gate Threshold Voltage (V)
0.5
Typical Output Capacitance (pF)
260
Maximum Power Dissipation (mW)
1980
Typical Fall Time (ns)
13
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
19
Typical Turn-On Delay Time (ns)
5.8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
9.4@4.5V, 12.4@2.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
88
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
63
Typical Gate Plateau Voltage (V)
1.8
Typical Reverse Recovery Time (ns)
15
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
0.8
Maximum Positive Gate-Source Voltage (V)
12
Mounting
Surface Mount
Package Height
0.87
Package Width
2
Package Length
2
PCB changed
6
Standard Package Name
SON
Supplier Package
TSDSON EP
Pin Count
6
Lead Shape
No Lead
注文数量