製品技術仕様
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
3.3
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
1500@10V
Typical Gate Charge @ Vgs (nC)
8.2(Max)@10V
Typical Gate Charge @ 10V (nC)
8.2(Max)
Typical Gate to Drain Charge (nC)
4.5(Max)
Typical Gate to Source Charge (nC)
1.8(Max)
Typical Reverse Recovery Charge (nC)
600
Typical Input Capacitance @ Vds (pF)
140@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
15@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
53
Maximum Power Dissipation (mW)
36000
Typical Fall Time (ns)
8.9
Typical Rise Time (ns)
17
Typical Turn-Off Delay Time (ns)
14
Typical Turn-On Delay Time (ns)
8.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
10
Typical Gate Plateau Voltage (V)
7.8
Typical Reverse Recovery Time (ns)
150
Maximum Diode Forward Voltage (V)
2
Mounting
Through Hole
Package Height
8.59
Package Width
4.45
Package Length
10.16
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole