MOSFET

IPD90P03P404ATMA2

Trans MOSFET P-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AECQ

Infineon Technologies AG

製品技術仕様

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Maximum Continuous Drain Current (A)

  90

• Maximum Drain-Source Resistance (mOhm)

  4.5@10V

• Typical Gate Charge @ Vgs (nC)

  100@10V

• Typical Gate Charge @ 10V (nC)

  100

• Typical Input Capacitance @ Vds (pF)

  7900@25V

• Maximum Power Dissipation (mW)

  137000

• Typical Fall Time (ns)

  20

• Typical Rise Time (ns)

  10

• Typical Turn-Off Delay Time (ns)

  70

• Typical Turn-On Delay Time (ns)

  35

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  3.6@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  360

• Mounting

  Surface Mount

• Package Height

  2.3

• Package Width

  6.22

• Package Length

  6.5

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3