MOSFET

IPD30N10S3L34ATMA2

Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

Infineon Technologies AG

製品技術仕様

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  30

• Maximum Drain-Source Resistance (mOhm)

  31@10V

• Typical Gate Charge @ Vgs (nC)

  24@10V

• Typical Input Capacitance @ Vds (pF)

  1520@25V

• Maximum Power Dissipation (mW)

  57000

• Typical Fall Time (ns)

  3

• Typical Rise Time (ns)

  4

• Typical Turn-Off Delay Time (ns)

  18

• Typical Turn-On Delay Time (ns)

  6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Mounting

  Surface Mount

• Package Height

  2.3

• Package Width

  6.22

• Package Length

  6.5

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3

• Lead Shape

  Gull-wing